TPS1110 |
RFQ for TPS1110 Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| TPS1110 | - | - | - |
The TPS1110 is a single, low-rDS(on), P-channel enhancement-mode power MOS transistor. The device features extremely low-rDS(on) values coupled with logic-level gate-drive capability and very low drain-source eakage current. With a maximum VGS(th) of 0.9 V and an IDSS of only 100 nA, the TPS1110 is the ideal high-side switch for low-voltage, portable battery-management power-distribution systems where maximizing battery life is an important concern. The thermal performance of the 8-pin small-outline (D) package has been greatly enhanced over the standard 8-pin SOIC, further making the TPS1110 ideally suited for many power pplications. For compatibility with existing designs, the TPS1110 has a pinout common with other P-channel MOSFETs in small-outline integrated circuit (SOIC) packages. The TPS1110 is characterized for an operating junction temperature range, TJ, from 40°C to 150°C. The D package is available packaged in standard sleeves or in taped and reeled formats. When ordering the tape-and-reel format, add an R suffix to the device type number (e.g., TPS1110DR).
Features |
| `Low rDS(on) . . . 65 mW Typ at VGS = 4.5 V ` High Current Capability 6 A at VGS = 4.5 V` Logic-Level Gate Drive (3 V Compatible) VGS(th) = 0.9 V Max` Low Drain-Source Leakage Current <100 nA From 25°C to 75°C at VDS = 6 V` Fast Switching . . . 5.8 ns Typ td(on)` Small-Outline Surface-Mount Power Package |
|
UNIT | ||||
| Drain-to-source voltage, VDS |
-7 |
V | ||
| Gate-to-source voltage, VGS |
±7 |
V | ||
| Continuous drain current ID |
VGS= -27V |
TP = 25‡ |
-5 |
A |
|
TP = 125‡ |
-2.3 | |||
|
VGS= -4.5V |
TP = 25‡ |
-6 | ||
|
TP = 125‡ |
-2.7 | |||
| Pulse drain current, ID |
TA = 25 |
-24 |
A | |
| Continuous source current (diode conduction), IS |
TA = 25 |
-6 |
A | |
| Continuous total power dissipation |
TA = 25‡ |
-4 |
W | |
| Junction-to-pin thermal resistance (qJP) |
31 |
/W | ||
| Continuous total power dissipation | TA = 25 |
1.25 |
W | |
| Junction-to-ambient thermal resistance (qJA) |
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